Accurate measurement of the piezoelectric property of thin films is critical for thin film process development and device design optimization. In this paper, we proposed a wafer-level thin film characterization method that provides a non-destructive, single-side measurement solution for evaluating and in-process monitoring the transverse piezoelectric coefficient (e 31, f). The e 31, f of piezoelectric films was determined by measuring the deflection of circular electrode induced by the converse piezoelectric effect, with the electrodes fabricated on top of piezoelectric thin film on a silicon substrate. The constitutive equation of the unimorph plate reveals a quadratic dependence of top electrode deflection (δ) on the radius (r), which was subsequently utilized to calculate the e 31, f while considering the electrode edge effect. Determined by non-constant variations of| δ/r 2| from finite element method (FEM) simulation results, the electrode edge effect leads to the specification of electrode size and substrate thickness for evaluating piezoelectric coefficient. A comprehensive FEM simulation analysis of the influence of wafer size and electrode location on the accuracy of the proposed method demonstrated its reliability for wafer-level characterization. The e 31, f measurement results of single-crystal (s-PZT) and polycrystalline PZT (p-PZT) exhibit good agreement between the proposed wafer-level method and the die-level cantilever method. These results demonstrated that the proposed single-side wafer-level method provides a reliable measurement technique for e 31, f characterization of piezoelectric thin film.