AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces

A Ouerdane, M Bouslama, M Ghaffour… - IOP Conference …, 2012 - iopscience.iop.org
A Ouerdane, M Bouslama, M Ghaffour, A Abdellaoui, A Nouri, K Hamaida, Y Monteuil
IOP Conference Series: Materials Science and Engineering, 2012iopscience.iop.org
Abstract At low energy (300 eV), the Ar+ ions bombardment lead to the formation of small
nanodots on the InP and the InSb surface compounds. We used the Auger electron
spectroscopy (AES) and electron energy loss spectroscopy (EELS) to detect the presence of
these features. However, these techniques alone do not allow us to determine with accuracy
their disturbed dimension related to the height and periodicity. For this reason, we combine
these spectroscopy methods with the TRIM (transport and range of ions in matter), SRIM …
Abstract
At low energy (300 eV), the Ar+ ions bombardment lead to the formation of small nanodots on the InP and the InSb surface compounds. We used the Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) to detect the presence of these features. However, these techniques alone do not allow us to determine with accuracy their disturbed dimension related to the height and periodicity. For this reason, we combine these spectroscopy methods with the TRIM (transport and range of ions in matter), SRIM (Stopping and Range of Ion in Matter) and Sigmund simulation methods to show the mechanism of interaction between the argon ions and the III-V compounds cited above and determine the dimension of disturbed areas as a function of Ar+ energy during 30 min.
iopscience.iop.org
以上显示的是最相近的搜索结果。 查看全部搜索结果