In recent years, SiC has received increased attention because of its potential for a wide
variety of high temperature, high power, high frequency, and/or radiation hardened
applications under which conventional semiconductors cannot adequately perform. For
semiconductor devices designed to operate in these harsh conditions, SiC offers an
unmatched combination of electronic and physical properties. The availability of SiC wafers
on a commercial basis has led to the demonstration of many types of metal-oxide …