An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
NE Posthuma, S You, S Stoffels… - 2018 IEEE 30th …, 2018 - ieeexplore.ieee.org
NE Posthuma, S You, S Stoffels, D Wellekens, H Liang, M Zhao, B De Jaeger, K Geens…
2018 IEEE 30th International Symposium on Power Semiconductor …, 2018•ieeexplore.ieee.orgEnhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p+ Si
substrates by using an industrial, Au-free process. The devices show true e-mode
performance, with a high V t of 2.8 V, low off-state leakage current and are dynamic R DS-
ON free over the complete V DS and temperature range. High temperature reverse bias
(HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power
HEMTs realized on 200 mm Si substrates, show industry ready device performance and …
substrates by using an industrial, Au-free process. The devices show true e-mode
performance, with a high V t of 2.8 V, low off-state leakage current and are dynamic R DS-
ON free over the complete V DS and temperature range. High temperature reverse bias
(HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power
HEMTs realized on 200 mm Si substrates, show industry ready device performance and …
Enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p + Si substrates by using an industrial, Au-free process. The devices show true e-mode performance, with a high V t of 2.8 V, low off-state leakage current and are dynamic R DS-ON free over the complete V DS and temperature range. High temperature reverse bias (HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power HEMTs realized on 200 mm Si substrates, show industry ready device performance and pass 1008 hour reliability testing, at V GS =0 V, V DS =650 V.
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