Analysis of trap state densities at HfO2/In0. 53Ga0. 47As interfaces
Y Hwang, R Engel-Herbert, NG Rudawski… - Applied Physics …, 2010 - pubs.aip.org
HfO 2 was deposited on n-and p-type In 0.53 Ga 0.47 As by chemical beam deposition.
Interface trap densities (D it) and their energy level distribution were quantified using the
conductance method in a wide temperature range (77 to 300 K). A trap level close to the
intrinsic energy level caused the D it to rise above 10 13 cm− 2 eV− 1. The trap level at
midgap gives rise to false inversion behavior in the capacitance-voltage curves for n-type
channels at room temperature. The apparent decrease of the D it close to the band edges is …
Interface trap densities (D it) and their energy level distribution were quantified using the
conductance method in a wide temperature range (77 to 300 K). A trap level close to the
intrinsic energy level caused the D it to rise above 10 13 cm− 2 eV− 1. The trap level at
midgap gives rise to false inversion behavior in the capacitance-voltage curves for n-type
channels at room temperature. The apparent decrease of the D it close to the band edges is …
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