Multi-layer graphene (MLG) films were transferred onto p-GaN layer as transparent
conductive electrodes in InGaN green light-emitting diodes (MLG-GLEDs), and their
optoelectronic properties were investigated. The interdiffusion between metal atoms from
metal pads and Ga atoms from p-GaN had a strong effect on the contact barrier at
graphene/p-GaN interface, resulting in substantial changes in transport characteristics of
MLG-GLEDs and deterioration of the electrical contact between graphene and p-GaN. A …