Silicate glasses, both undoped and lightly doped with phosphorus, prepared by a low
pressure plasma enhanced chemical vapor deposition (PECVD) system using
tetraethylorthosilicate or silane as silicon sources and atmospheric pressure chemical vapor
deposition technique using silane, were evaluated. The three analyzed phosphosilicate
films were nominally 4.0 wt% doped. All the samples were deposited in the temperature
range of 350–420° C. Their main properties such as refractive index, density, wet etch rate …