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Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications

X Liu, SM Sadaf, M Son, J Park, J Shin… - IEEE Electron …, 2011 - ieeexplore.ieee.org
X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang
IEEE Electron Device Letters, 2011•ieeexplore.ieee.org
To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a
threshold-switching (TS) Pt/NbO_2/Pt device with a memory-switching (MS) Pt/Nb_2O_5/Pt
device and observe the suppression of the undesired sneak current. A simpler
Pt/Nb_2O_5/NbO_2/Pt bilayer oxide device was designed; it simultaneously exhibits TS and
MS. The unique device characteristics in the metal/oxide/metal structure can be directly
integrated into a crosspoint memory array without the diode; this can significantly reduce the …
To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) device with a memory-switching (MS) device and observe the suppression of the undesired sneak current. A simpler bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this can significantly reduce the fabrication complexity.
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