EUV scatterometry is a potential high-throughput measurement method for the characterization of EUV photomask structures. We present a comparison of angle resolved extreme ultraviolet (EUV) scatterometry and critical dimension atomic force microscope (CD-AFM) as a reference metrology for measurements of geometrical parameters like line width (CD), height and sidewall angle of EUV photomask structures. The structures investigated are dense and semidense bright and dark lines with different nominal CDs between 140 nm and 540 nm. The results show excellent linearity of the critical dimension measured with both methods within a range of only 1.8 nm and an offset of the absolute values below 3 nm. A maximum likelihood estimation (MLE) method is used to reconstruct the shape parameters and to estimate their uncertainties from the measured scattering efficiencies. The newly developed CD-AFM at PTB allows versatile measurements of parameters such as height, CD, sidewall angle, line edge/width roughness, corner rounding, and pitch. It applies flared tips to probe steep and even undercut sidewalls and employs a new vector approaching probing (VAP) strategy which enables very low tip wear and high measurement flexibility. Its traceability is ensured by a set of calibrated step-height and reference CD standards.