Cryogenic MOS transistor model

A Beckers, F Jazaeri, C Enz - IEEE Transactions on Electron …, 2018 - ieeexplore.ieee.org
… -based analytical model for the MOS transistor operating … The model is developed relying
on the 1-D Poisson equation … a result of dopant freezeout in cryogenic equilibrium. Explicit …

MOSFET characterization and modeling at cryogenic temperatures

C Luo, Z Li, TT Lu, J Xu, GP Guo - Cryogenics, 2019 - Elsevier
… However, the characteristics of metal-oxidesemiconductor field-effect transistors (MOSFETs) …
SPICE model to be developed for use at cryogenic temperatures. Cryogenic temperature …

Characterization and compact modeling of nanometer CMOS transistors at deep-cryogenic temperatures

RM Incandela, L Song, H Homulle… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
… for the design of circuits operating at cryogenic temperatures. To overcome that limitation,
we propose a model for cryogenic CMOS devices based on existing compact models. Our …

Statistical MOSFET modeling methodology for cryogenic conditions

A Kabaoğlu, NŞ Solmaz, S İlik, Y Uzun… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
… in extending the capabilities of a cryogenic transistor model to include the impact of device
… the cryogenic circuit behavior and should properly be accounted in the transistor model so …

Cryogenic transistor measurement and modeling for engineering applications

M Goryachev, S Galliou, P Abbé - Cryogenics, 2010 - Elsevier
… But it is known [5] that for extreme temperatures, standard compact models, even such …
connected with cryogenic transistor modeling is the parameter extraction. The model difficulty and …

The cryogenic temperature behavior of bipolar, MOS, and DTMOS transistors in standard CMOS

H Homulle, L Song, E Charbon… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
cryogenic probe station with reference temperature sensor on the sample holder, while the
MOS transistors … characterization and compact modeling at deep-cryogenic temperatures,” in …

A cryogenic modeling methodology of MOSFET IV characteristics in BSIM3

A Kabaoğlu, MB Yelten - … Conference on Synthesis, Modeling …, 2017 - ieeexplore.ieee.org
MOSFET in cryogenic temperatures. Thus, there is a need to develop a methodology to find
revised binning parameters that will hold in cryogenic conditions without changing the model

Compact and distributed modeling of cryogenic bulk MOSFET operation

A Akturk, M Holloway, S Potbhare… - … on Electron Devices, 2010 - ieeexplore.ieee.org
… tributed numerical models for cryogenic bulk MOSFET operation down to 20 K to advance …
using the drift–diffusion transport model. In addition, to obtain a compact model for use in low-…

Characterization and modelling of MOSFET operating at cryogenic temperature for hybrid superconductor-CMOS circuits

Y Feng, P Zhou, H Liu, J Sun… - … science and technology, 2004 - iopscience.iop.org
model that describes and predicts the behaviour of short channel MOSFET devices at 4 K,
we need to study the cryogenic … and establish a suitable device model for 4 K operation of …

MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18 μm CMOS process

P Martin, AS Royet, F Guellec, G Ghibaudo - Solid-State Electronics, 2011 - Elsevier
… As the power consumption in the pixel array is a main concern for cryogenic systems, pixel’s
MOSFET transistors often operate in the moderate or weak inversion region. Readout noise …