Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients
T Ganguli, M Vedvyas, P Bhattacharya, LM Kukreja… - Thin Solid Films, 2001 - Elsevier
Epitaxial films of ZnSe with a thickness of approximately 1 μm, were deposited on (001) semi-
insulating GaAs by pulsed laser deposition using a third harmonic Nd-YAG laser at 10− 6
torr vacuum and at various pressures of He and Ar gases. The best crystalline quality of the
ZnSe epilayer was obtained when the deposition was carried out at 10− 4 torr of He. The full
width at half maximum of the X-ray diffraction rocking curve of the ZnSe film deposited at
400° C in 10− 4 torr of He was approximately 230 arcsecs. A comparison of the reciprocal …
insulating GaAs by pulsed laser deposition using a third harmonic Nd-YAG laser at 10− 6
torr vacuum and at various pressures of He and Ar gases. The best crystalline quality of the
ZnSe epilayer was obtained when the deposition was carried out at 10− 4 torr of He. The full
width at half maximum of the X-ray diffraction rocking curve of the ZnSe film deposited at
400° C in 10− 4 torr of He was approximately 230 arcsecs. A comparison of the reciprocal …
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