Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices
CL Cheng, KS Chang-Liao, CH Huang… - Applied Physics …, 2005 - pubs.aip.org
This work examined the effects of bulk nitrogen in HfO x N y gate dielectric on current-
conduction and charge trapping of metal-oxide-semiconductor devices. The nitrogen
concentration profiles in HfO x N y gate dielectric were adjusted by Hf target sputtered in an
ambient of modulated nitrogen flow. The current-conduction mechanisms of HfO x N y film
comprised of various nitrogen concentration profiles at the low-and high-electrical field were
dominated by Schottky emission and Frenkel–Poole emission, respectively. The trap energy …
conduction and charge trapping of metal-oxide-semiconductor devices. The nitrogen
concentration profiles in HfO x N y gate dielectric were adjusted by Hf target sputtered in an
ambient of modulated nitrogen flow. The current-conduction mechanisms of HfO x N y film
comprised of various nitrogen concentration profiles at the low-and high-electrical field were
dominated by Schottky emission and Frenkel–Poole emission, respectively. The trap energy …
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