Design and fabrication of AlN RF MEMS switch for near-zero power RF wake-up receivers

T Wu, G Chen, C Cassella, WZ Zhu… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
T Wu, G Chen, C Cassella, WZ Zhu, M Assylbekova, M Rinaldi, N McGruer
2017 IEEE SENSORS, 2017ieeexplore.ieee.org
We describe an AlN-based resonant switch (resoswitch) for use in a Near-Zero (NZero) RF
Wake-up receiver. A folded beam structure compensates for the curvature caused by the
stress gradient in sputtered AlN and ensures that the free end of center actuation beam is
level with the side anchor beams. A 80.13 kHz resoswitch with Q over 4000 and an actuation
gap of approximately 600 nm turns on when a-4 dBm, 800MHz signal square wave
modulated at 80.13 kHz is applied to the actuator. This AlN electrostatic resoswitch enables …
We describe an AlN-based resonant switch (resoswitch) for use in a Near-Zero (NZero) RF Wake-up receiver. A folded beam structure compensates for the curvature caused by the stress gradient in sputtered AlN and ensures that the free end of center actuation beam is level with the side anchor beams. A 80.13 kHz resoswitch with Q over 4000 and an actuation gap of approximately 600 nm turns on when a -4 dBm, 800MHz signal square wave modulated at 80.13 kHz is applied to the actuator. This AlN electrostatic resoswitch enables integration of a high gain RF piezoelectric transformer with a high-Q electrostatic resoswitch for an ultra-low power RF receiver.
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