For the first time, a distinctive approach to design and investigate double‐gate Schottky
Barrier MOSFET (DG SB‐MOSFET) using gate engineering is reported. Three isolated gates
(one Control gate and two N‐gates) of different work‐functions on both sides of the gate
oxides have been used. In the proposed device, without the need of doping, n‐type region is
formed at the source/drain contact‐channel interfaces by inducing electron in the ultrathin
intrinsic silicon channel using appropriate work‐function metal N‐gates. Using N‐gates, the …