Design of Novel SRAM cell using Hybrid VLSI Techniques for Low Power and High Speed in Embedded Memories
K Gavaskar, US Ragupathy, D Malathi… - … for Smart World …, 2018 - ieeexplore.ieee.org
Static or leakage power is the dominating component of total power dissipation in deep
nanometer technologies below 90nm, which has resulted in increase from 18% at 130nm to
54% at 65nm technology due to continued device and voltage scaling. Static Random-
Access memory (SRAM) is a type of RAM in which data is not written permanently and it
does not need to be refreshed periodically. Different techniques have been applied to SRAM
cell to reduce leakage power without affecting its performance. A novel 10T SRAM …
nanometer technologies below 90nm, which has resulted in increase from 18% at 130nm to
54% at 65nm technology due to continued device and voltage scaling. Static Random-
Access memory (SRAM) is a type of RAM in which data is not written permanently and it
does not need to be refreshed periodically. Different techniques have been applied to SRAM
cell to reduce leakage power without affecting its performance. A novel 10T SRAM …
Design of novel SRAM cell using hybrid VLSI techniques for low leakage and high speed in embedded memories
K Gavaskar, US Ragupathy, V Malini - Wireless Personal Communications, 2019 - Springer
Static or leakage power is the dominating component of total power dissipation in deep
nanometer technologies below 90 nm, which has resulted in increase from 18% at 130 nm
to 54% at 65 nm technology due to continued device and voltage scaling. Static random
access memory (SRAM) is a type of RAM in which data is not written permanently and it
does not need to be refreshed periodically. Different techniques have been applied to SRAM
cell to reduce leakage power without affecting its performance. A novel 10T SRAM …
nanometer technologies below 90 nm, which has resulted in increase from 18% at 130 nm
to 54% at 65 nm technology due to continued device and voltage scaling. Static random
access memory (SRAM) is a type of RAM in which data is not written permanently and it
does not need to be refreshed periodically. Different techniques have been applied to SRAM
cell to reduce leakage power without affecting its performance. A novel 10T SRAM …
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