[HTML][HTML] Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods
AM Vidarsson, JR Nicholls, D Haasmann… - Journal of Applied …, 2022 - pubs.aip.org
Fast near-interface (NI) traps have recently been suggested to be the main cause for poor
inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors.
Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC)
analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of
fast and slow near-interface traps at the SiO 2/4H-SiC interface. TDRC reveals a
suppression of slow near-interface traps after nitridation. Capacitance and conductance …
inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors.
Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC)
analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of
fast and slow near-interface traps at the SiO 2/4H-SiC interface. TDRC reveals a
suppression of slow near-interface traps after nitridation. Capacitance and conductance …
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