Determination of stress, strain, and elemental distribution within In (Ga) As quantum dots embedded in GaAs using advanced transmission electron microscopy
Non-truncated pyramidal In (Ga) As quantum dots (QDs) embedded in GaAs were obtained
by a combination of low temperature/high rate GaAs covering of InAs QDs. We use
advanced transmission electron microscopy to study the composition and mechanics of the
objects. Results from the core region of a sliced QD, and from an entire object, are consistent
and complementary allowing the development of accurate models describing the 3D shape,
chemical distribution, elastic strains and stresses in the QD, wetting layer, and matrix. The …
by a combination of low temperature/high rate GaAs covering of InAs QDs. We use
advanced transmission electron microscopy to study the composition and mechanics of the
objects. Results from the core region of a sliced QD, and from an entire object, are consistent
and complementary allowing the development of accurate models describing the 3D shape,
chemical distribution, elastic strains and stresses in the QD, wetting layer, and matrix. The …
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