We have investigated the electrical behavior of high permittivity (high-k) hafnium–titanium–
silicate (Hf x Ti y Si z O) layers with different Hf: Ti ratios in the films. The films are prepared
by metalorganic chemical vapor deposition using a mixture of two single source precursors.
Oxide and interface charges, leakage currents and conduction mechanisms are found to be
a strong function of the film composition. The films with Hf content less than 10 at.% show
lower levels of oxide and interface charges and higher dielectric constant whereas those …