Direct comparison of cross‐sectional scanning capacitance microscope dopant profile and vertical secondary ion‐mass spectroscopy profile
Y Huang, CC Williams, H Smith - … of Vacuum Science & Technology B …, 1996 - pubs.aip.org
The scanning capacitance microscope (SCM) has been shown to be useful for quantitative
2D dopant profiling near the surface of silicon. An atomic force microscope is used to
position a nanometer scale tip at a silicon surface, and local capacitance change is
measured as a function of sample bias. A new feedback method has been recently
demonstrated in which the magnitude of the ac bias voltage applied to the sample is
adjusted to maintain a constant capacitance change as the tip is scanned across the sample …
2D dopant profiling near the surface of silicon. An atomic force microscope is used to
position a nanometer scale tip at a silicon surface, and local capacitance change is
measured as a function of sample bias. A new feedback method has been recently
demonstrated in which the magnitude of the ac bias voltage applied to the sample is
adjusted to maintain a constant capacitance change as the tip is scanned across the sample …
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