Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed
i-ZnO: Al (3%)/n-ZnO: Al (5%) buried heterojunction diode with a 2 μ m rib waveguide.
Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and
optical confinement of a buried heterojunction rib waveguide structure. Hence, emission
intensity (threshold current) can be enhanced (reduced) by∼ 9 times (∼ 40%)⁠. Directional
emission as well as controllability on the number of the random lasing modes can also be …

Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed
i-ZnO: Al (3%)/n-ZnO: Al (5%) buried heterojunction diode with a 2 μm rib waveguide.
Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and
optical confinement of a buried heterojunction rib waveguide structure. Hence, emission
intensity (threshold current) can be enhanced (reduced) by∼ 9 times (∼ 40%). Directional
emission as well as controllability on the number of the random lasing modes can also be …