Droop improvement in high current range on PSS-LEDs
Electronics letters, 2011•IET
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating
a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was
improved from 45.9 to 7.6%. At a wavelength of 447 nm, and with standard on-header
packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a
current of 20 mA. The output power of the 9QW PSS-LED remains linear with increasing
drive current, even up to relatively high current density, and the EQE is almost constant.
a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was
improved from 45.9 to 7.6%. At a wavelength of 447 nm, and with standard on-header
packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a
current of 20 mA. The output power of the 9QW PSS-LED remains linear with increasing
drive current, even up to relatively high current density, and the EQE is almost constant.
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a current of 20 mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.
IET
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