Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
The properties of Si-doped GaN (GaN: Si) thin films and InGaN/GaN light-emitting diodes
(LEDs) grown by metalorganic chemical vapor deposition on free-standing {101̄0} m-plane
GaN substrates were investigated with regard to carrier gas and substrate misorientation
toward the [0001̄] c− direction. The surface morphology of the GaN: Si thin films and the
LEDs was found to be strongly dependent on the choice of carrier gas and substrate
misorientation. Growth of GaN: Si thin films on nominally on-axis substrates produced …
(LEDs) grown by metalorganic chemical vapor deposition on free-standing {101̄0} m-plane
GaN substrates were investigated with regard to carrier gas and substrate misorientation
toward the [0001̄] c− direction. The surface morphology of the GaN: Si thin films and the
LEDs was found to be strongly dependent on the choice of carrier gas and substrate
misorientation. Growth of GaN: Si thin films on nominally on-axis substrates produced …
以上显示的是最相近的搜索结果。 查看全部搜索结果