Effect of heat treating metallic constituents on the properties of Cu2ZnSnSe4 thin films formed by a two-stage process
Abstract In this study Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by a two-stage process
that involved sputter deposition of a Cu/Sn/Zn/Cu metallic stack, annealing the stack at
various temperatures for 30 min, evaporation of a Se cap over the metallic stack thus forming
a precursor layer, and subjecting the precursor layer to a final high temperature reaction
step at 550° C. Different samples were prepared with annealing temperatures of the metallic
stacks ranging from 200° C to 350° C. The results showed that heat treatment of the metallic …
that involved sputter deposition of a Cu/Sn/Zn/Cu metallic stack, annealing the stack at
various temperatures for 30 min, evaporation of a Se cap over the metallic stack thus forming
a precursor layer, and subjecting the precursor layer to a final high temperature reaction
step at 550° C. Different samples were prepared with annealing temperatures of the metallic
stacks ranging from 200° C to 350° C. The results showed that heat treatment of the metallic …
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