Effect of heavy doping on the properties of high-low junction
A Sinha, SK Chattopadhyaya - IEEE Transactions on Electron …, 1978 - ieeexplore.ieee.org
A Sinha, SK Chattopadhyaya
IEEE Transactions on Electron Devices, 1978•ieeexplore.ieee.orgThe minority carrier reflecting properties of the high-low junction have been studied, taking
into account the heavy doping effects. It has been observed that the junction leakage
velocity attains a minimum value for a particular value of impurity concentration in the
heavily doped region, when an empirical relationship giving bandgap narrowing as a
function of impurity concentration in silicon is utilized.
into account the heavy doping effects. It has been observed that the junction leakage
velocity attains a minimum value for a particular value of impurity concentration in the
heavily doped region, when an empirical relationship giving bandgap narrowing as a
function of impurity concentration in silicon is utilized.
The minority carrier reflecting properties of the high-low junction have been studied, taking into account the heavy doping effects. It has been observed that the junction leakage velocity attains a minimum value for a particular value of impurity concentration in the heavily doped region, when an empirical relationship giving bandgap narrowing as a function of impurity concentration in silicon is utilized.
ieeexplore.ieee.org
以上显示的是最相近的搜索结果。 查看全部搜索结果