Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

SO Kucheyev, JS Williams, J Zou, G Li… - Nuclear Instruments and …, 2002 - Elsevier
The effect of ion species on the damage buildup behavior in wurtzite GaN under
bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford
backscattering/channeling spectrometry and transmission electron microscopy. Results
show that both the density of collision cascades and chemical effects of implanted species
affect the damage buildup behavior during bombardment at LN2. In particular, an increase
in the density of collision cascades (with increasing ion mass) strongly enhances the level of …
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