We have investigated the effect of light exposure and ultrasonic (US) treatment on the formation of porous Si layers grown by electroless stain-etching technique. It was shown that; the He-Ne laser exposure resultedin a considerable increase in both the hydrogenation and the oxidation amounts in n-type Si, but a decrease in p-type wafers. The effect is attributable to effective change in the concentration of free hole carriers. The UV light exposure has led to the shift at the peak positions, indicating probably a change in bonding configuration, and increase in oxidation. Also, a correlation was established between the ultrasonic treatment and the microstructure. The US treated samples exhibit a decrease in hydrogenation and oxidation. UV exposure together with the US has led to a further decrease in both hydrogen and oxygen amounts, which was rather indicative of an excessive surface etching.