Effect of microbubbles on ozonized water for photoresist removal
M Takahashi, H Ishikawa, T Asano… - The Journal of Physical …, 2012 - ACS Publications
In this paper, we describe the use of ozone microbubbles in photoresist removal from silicon
wafers. Ozonized water has attracted much attention as an environmental friendly cleaning
method in semiconductor manufacturing. However, it would be desirable to enhance the
oxidative ability of ozonized water for practical application. The existence of microbubbles in
ozonized water has been shown to significantly enhance the photoresist removal rate due to
an elevated dissolved ozone concentration (approximately 2.5 times that of ordinary ozone …
wafers. Ozonized water has attracted much attention as an environmental friendly cleaning
method in semiconductor manufacturing. However, it would be desirable to enhance the
oxidative ability of ozonized water for practical application. The existence of microbubbles in
ozonized water has been shown to significantly enhance the photoresist removal rate due to
an elevated dissolved ozone concentration (approximately 2.5 times that of ordinary ozone …
Effect of microbubbles on ozonized water for photoresist removal
M Takahashi, H Horibe, K Matsuura… - Journal of Photopolymer …, 2015 - jstage.jst.go.jp
The existence of microbubbles in ozonized water has been shown to significantly enhance
the photoresist removal rate due to an elevated dissolved ozone concentration and a direct
effect of the microbubbles relating to the radical generation. Additionally, the ozone
microbubble solution was able to effectively remove a high-dose ion-implanted photoresist,
which is extremely resistant to removal by ozonized water and other wet chemicals because
of its amorphous carbon-like layer, or “crust”. Electron spin resonance experiments were …
the photoresist removal rate due to an elevated dissolved ozone concentration and a direct
effect of the microbubbles relating to the radical generation. Additionally, the ozone
microbubble solution was able to effectively remove a high-dose ion-implanted photoresist,
which is extremely resistant to removal by ozonized water and other wet chemicals because
of its amorphous carbon-like layer, or “crust”. Electron spin resonance experiments were …