Effect of wet pre-treatment on interfacial adhesion energy of direct Cu-Cu bond
EJ Jang, B Kim, T Matthias, S Hyun… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
2009 IEEE International Interconnect Technology Conference, 2009•ieeexplore.ieee.org
Cu and Ti films were deposited by sputtering on thermally oxidized Si wafers and then the
deposited films were bonded by direct Cu-Cu thermo-compression bonding for evaluating
the effect of the wet pre-treatment on the interfacial adhesion energy. The interfacial
adhesion energy was evaluated as 0.29, 1.28, 1.64, 1.17, and 0.42 J/m 2 by acetic acid
pretreatment at 35degC for 0, 1, 5, 10, and 15 min. The existence of optimum wet
pretreatment time seems to be related to the film thickness effect as well as the surface oxide …
deposited films were bonded by direct Cu-Cu thermo-compression bonding for evaluating
the effect of the wet pre-treatment on the interfacial adhesion energy. The interfacial
adhesion energy was evaluated as 0.29, 1.28, 1.64, 1.17, and 0.42 J/m 2 by acetic acid
pretreatment at 35degC for 0, 1, 5, 10, and 15 min. The existence of optimum wet
pretreatment time seems to be related to the film thickness effect as well as the surface oxide …
Cu and Ti films were deposited by sputtering on thermally oxidized Si wafers and then the deposited films were bonded by direct Cu-Cu thermo-compression bonding for evaluating the effect of the wet pre-treatment on the interfacial adhesion energy. The interfacial adhesion energy was evaluated as 0.29, 1.28, 1.64, 1.17, and 0.42 J/m 2 by acetic acid pretreatment at 35degC for 0, 1, 5, 10, and 15 min. The existence of optimum wet pretreatment time seems to be related to the film thickness effect as well as the surface oxide removal effect.
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