Efficient nitrogen incorporation in GaAs using novel metal organic As–N precursor di-tertiary-butyl-arsano-amine (DTBAA)
III/V semiconductors containing small amounts of nitrogen (N; dilute nitrides) are discussed
in the context of different solar cell and laser applications. The efficiency of these devices is
negatively affected by carbon (C) incorporation, which comes either from the direct C–N
bond in the N precursor unsymmetrical 1, 1-dimethylhydrazine (UDMHy) used
conventionally or from the alkyl groups of the conventional precursors for gallium (Ga),
indium and arsenic (As) containing carbon. This C is incorporated together with the N due to …
in the context of different solar cell and laser applications. The efficiency of these devices is
negatively affected by carbon (C) incorporation, which comes either from the direct C–N
bond in the N precursor unsymmetrical 1, 1-dimethylhydrazine (UDMHy) used
conventionally or from the alkyl groups of the conventional precursors for gallium (Ga),
indium and arsenic (As) containing carbon. This C is incorporated together with the N due to …