We investigate the effects of electron and acoustic phonon confinements on the low-field
electron mobility of thin, gated, square silicon nanowires SiNWs, surrounded by SiO2. We
employ a self-consistent Poisson–Schrödinger–Monte Carlo solver that accounts for
scattering due to acoustic phonons confined and bulk, intervalley phonons, and the Si/SiO2
surface roughness. The wires considered have cross sections between 33 and 88 nm2. For
larger wires, the dependence of the mobility on the transverse field from the gate is …