The development of very fast switching semiconductors based on silicon carbide (SiC) offers
many opportunities. Switching speed and pulse frequency can be increased significantly
and passive components can be reduced in size and cost. One requirement to make use of
these benefits is to package the semiconductors in a way that reduces EMI already at its
origin. The embedding technology gives the opportunity to reduce parasitic inductances
significantly [1]. When the low side chip of a half bridge is attached face-down, the output …

The development of very fast switching semiconductors based on siliconcarbide (SiC) offers
many opportunities. Switching speed can be increased significantly, and passive
components can be reduced in size and cost. The embedding technology reduces parasitic
inductances significantly [1]. As the low side chip of one half bridge is attached face-down,
the output capacitance is almost eliminated and DC+ and DC-capacitances against heat
sink are symmetrized [2]. This paper focusses on how the module needs to be designed to …