Exchange biased magnetic tunnel junction MTJ structures are shown to have useful
properties for forming magnetic memory storage elements in a novel cross-point
architecture. MTJ elements have been developed which exhibit very large magnetoresistive
MR values exceeding 40% at room temperature, with specific resistance values ranging
down to as little as 60 m2, and with MR values enhanced by moderate thermal treatments.
Large MR values are observed in magnetic elements with areas as small as 0.17 m2. The …