A new process for the fabrication of silicon pin diode radiation detectors is described. The
utilization of backside gettering in the fabrication process results in the actual physical
removal of detrimental impurities from critical device regions. This reduces the sensitivity of
detector properties to processing variables while yielding low diode reverse-leakage
currents. In addition, gettering permits the use of processing temperatures compatible with
integrated-circuit fabrication. P-channel MOSFETs and silicon pin diodes have been …

ABSTRACT A new process for the fabrication of silicon pin diode radiation detectors is
described. The utilization of backside gettering in the fabrication process results in the actual
physical removal of detrimental impurities from critical device regions. This reduces the
sensitivity of detector properties to processing variables while yielding low diode reverse-
leakage currents. In addition, gettering permits the use of processing temperatures
compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon pin diodes …