Field emission tip array fabrication utilizing geometrical hindrance in the oxidation of Si
Sharpness of field emitter tips is one of the key factors to achieve excellent field emission
performance. In order to sharpen the tips to atomic scale, a new method combining the
bottom-up process of wafer-scale nanopattern formation via self-assembly of diblock
copolymer with the top-down process of anisotropic etching of Si followed by nanocasting is
developed. Geometrical hindrance in the oxidation of Si at nanometer scale is exploited to
further sharpen the field emission tips.
performance. In order to sharpen the tips to atomic scale, a new method combining the
bottom-up process of wafer-scale nanopattern formation via self-assembly of diblock
copolymer with the top-down process of anisotropic etching of Si followed by nanocasting is
developed. Geometrical hindrance in the oxidation of Si at nanometer scale is exploited to
further sharpen the field emission tips.
[引用][C] Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si
OPUS 4 | Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the
Oxidation of Si … Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in
the Oxidation of Si …
Oxidation of Si … Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in
the Oxidation of Si …
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