The shortcomings of the prior art are overcome and addi tional advantages are provided
through the provision, in one aspect, of a method of inducing physical stress on a channel
region of a FinFET. The method includes providing an inter mediate semiconductor structure
of a FinFET, the structure including a semiconductor Substrate and at least one fin coupled
to the Substrate. The fin includes a source region, a drain region and a channel between the
Source region and the drain region. The method further includes epitaxially grow ing a …