In this study, pure ZnO and Al-doped ZnO thin films were developed on glass by sol–gel process followed by drying and annealing in air at 170 and 400 °C, respectively. The surface morphology and structural characteristics were determined through scanning electron microscopy, atomic force microscopy and X-ray diffraction. The Fourier transform infrared spectroscopy validated the formation of Al-doped ZnO film on glass substrate. It was evaluated that 1 at% aluminum (Al) doping in ZnO film showed low electrical resistivity and higher charge carrier concentration due to uniformly dispersed regular shape crystallites as compared to pure ZnO and 2 at% ‘Al’-doped thin films.