Frontiers of mid-infrared lasers based on transition metal doped II–VI semiconductors

S Mirov, V Fedorov, I Moskalev, M Mirov… - Journal of …, 2013 - Elsevier
Journal of Luminescence, 2013Elsevier
Recent progress in chromium and iron doped II–VI semiconductor materials makes them the
laser sources of choice when one needs a compact system with broad mid-IR tunability over
1.9–6μm. Output powers exceeding 10W, output energies 20mJ, pulse durations 80fs, peak
powers in excess of 1GW, and efficiency up to 70% were demonstrated in several Cr doped
semiconductors. The unique combination of technological and spectroscopic characteristics
makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This …
Recent progress in chromium and iron doped II–VI semiconductor materials makes them the laser sources of choice when one needs a compact system with broad mid-IR tunability over 1.9–6μm. Output powers exceeding 10W, output energies 20mJ, pulse durations 80fs, peak powers in excess of 1GW, and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This article reviews transition metal doped II–VI materials and recent progress in Cr- and Fe- doped solid-state mid-IR lasers.
Elsevier
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