We report on a GaN-based field effect transistor with laterallygated multiple 2DEG channels, called BRIDGE (buried dual gate) HEMT. Unique operation principle of the transistor enables unprecedented device characteristics suitable for efficient and linear millimeter-wave power amplifier applications. The lateral gate simultaneously modulate multiple 2DEG channels formed in an Al (Ga) N/GaN hetero-structure. A higher electron saturation velocity measured for a lower 2DEG density suggests that the multiple 2DEG channel structure is ideal for obtaining a high current density, and simultaneously enhancing high frequency performance of the transistor. The BRIDGE HEMTs built on a 16-channel HEMT epitaxial structure with a net 2DEG density of 3.3× 10 13 cm-2 exhibited a record high knee current density of 3.7 A/mm. The absence of the top contact gate results in negligible current collapse by eliminating a high electric field region at the drain end of the gate–another key feature of the BRIDGE HEMT.