We report a gas sensor using an anodic TiO2 thin films that were synthesized on Si wafer with Pt electrodes on top. The anodic TiO2 films were prepared through an anodic oxidation in fluoride-ion-containing electrolytes. The obtained material was annealed at 450°C for crystallization. Two Pt electrodes were formed on TiO2 film. The electrical behavior during anodization was measured. The material properties of TiO2 film were studied using a scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). Gas response measurements to hydrogen (10, 100, 1000ppm) were carried out by varying operation temperatures ranging from 30 - 200°C in Ar buffers. The sensor showed a prominent response towards H2 at 200°C.