Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures
We have observed that the estimation of two-dimensional electron gas density is dependent
on the device geometry. The geometric contribution leads to the anomalous estimation of the
GaN based heterostructure properties. The observed discrepancy is found to originate from
the anomalous area dependent capacitance of GaN based Schottky diodes, which is an
integral part of the high electron mobility transistors. The areal capacitance density is found
to increase for smaller radii Schottky diodes, contrary to a constant as expected intuitively …
on the device geometry. The geometric contribution leads to the anomalous estimation of the
GaN based heterostructure properties. The observed discrepancy is found to originate from
the anomalous area dependent capacitance of GaN based Schottky diodes, which is an
integral part of the high electron mobility transistors. The areal capacitance density is found
to increase for smaller radii Schottky diodes, contrary to a constant as expected intuitively …
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