We investigate the high frequency performances of flexible field-effect transistors based on
carbon nanotubes. A large density of mostly aligned carbon nanotubes deposited on a
flexible substrate by dielectrophoresis serves as the channel. The transistors display a
constant transconductance up to at least 6 GHz and a current gain cutoff frequency (f T) as
high as 1 GHz at V DS=− 700 mV⁠. Bending tests show that the devices can withstand a
high degree of flexion characterized by a constant transconductance for radius of curvature …