Graphene spin valves can be optimized for various spintronic applications by tuning the associated experimental parameters. In this work, we report the angle dependent magnetoresistance (MR) in graphene spin valve for different orientations of applied magnetic field (B). The switching points of spin valve signals show a clear shift towards higher B for each increasing angle of the applied field, thus sensing the response for respective orientation of the magnetic field. The angular variation of B shifts the switching points from ±95 G to ±925 G as the angle is varied from 0° to 90° at 300 K. The observed shifts in switching points become more pronounced (±165 G to ±1450 G) at 4.2 K for similar orientation. A monotonic increase in MR ratio is observed as the angle of magnetic field is varied in the vertical direction at 300 K and 4.2 K temperatures. This variation of B (from 0° to 90°) increases the magnitude of MR ratio from ∼0.08% to ∼0.14% at 300 K, while at 4.2 K it progresses to ∼0.39% from ∼0.14%. The sensitivity related to angular variation of such spin valve structure can be employed for angle sensing applications.