Growth and morphological modeling of InP nanowires obtained by Au-catalyzed selective area MOMBE
We present a theoretical analysis of vertical versus radial growth of InP nanowires obtained
by selective area metalorganic molecular beam epitaxy at temperatures from 400 to 480° C.
It is shown that the nanowire formation is controlled by surface diffusion of indium adatoms
whose concentration on the sidewalls determines the local radial growth rate. Two models
for the radial growth rate are considered, with linear (step flow) and exponential (two-
dimensional nucleation) dependences on the adatom concentration. The linear model …
by selective area metalorganic molecular beam epitaxy at temperatures from 400 to 480° C.
It is shown that the nanowire formation is controlled by surface diffusion of indium adatoms
whose concentration on the sidewalls determines the local radial growth rate. Two models
for the radial growth rate are considered, with linear (step flow) and exponential (two-
dimensional nucleation) dependences on the adatom concentration. The linear model …
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