The IMC (interfacial intermetallic compound) produced by the metallurgical reaction between the solder and the Cu plate enables the packaging of IGBT (insulated gate bipolar transistor) modules. In this paper, the growth behavior of IMCs of Sn58Bi/Cu and Sn58Bi-0.05AlN/Cu at different times (10, 30 and 60 min) and temperatures (200, 250 and 300 °C) was investigated, which can provide a reference for the connection of IGBT. It was shown that the interfacial IMC thickness of both solders increased with time and temperature, but the growth of interfacial IMC was suppressed for Sn58Bi solder containing 0.05 wt% AlN. The effect of AlN on the inhibition of grain growth was also observed by EBSD testing. Because of the adsorption effect of AlN nanoparticles, they can adhere to the surface of IMC layer and decrease the effective the diffusion path of unreacted Cu atoms, thereby inhibiting the growth of interfacial IMC. And the effect of AlN particles on interfacial IMC was analyzed via phase field simulation. In addition, under the heating conditions with high temperature and long time, there were fewer cracks in the solder joints containing AlN particles, compared to the Sn58Bi solder. Therefore, AlN nanoparticles can enhance the reliability of Sn58Bi/Cu solder joints.