[HTML][HTML] HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review
J Liao, S Dai, RC Peng, J Yang, B Zeng, M Liao… - Fundamental …, 2023 - Elsevier
The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write
speed, and high reliability, which are crucial for high-performance computing. Ferroelectric
memory has undergone extensive investigation as a viable alternative for commercial
applications since the post-Moore era. However, conventional perovskite-structure
ferroelectrics (eg, PbZr x Ti 1-x O 3) encounter severe limitations for high-density integration …
required for novel non-volatile memory devices with low power consumption, fast read/write
speed, and high reliability, which are crucial for high-performance computing. Ferroelectric
memory has undergone extensive investigation as a viable alternative for commercial
applications since the post-Moore era. However, conventional perovskite-structure
ferroelectrics (eg, PbZr x Ti 1-x O 3) encounter severe limitations for high-density integration …
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