High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
M Kim, JH Jeong, HJ Lee, TK Ahn, HS Shin… - Applied Physics …, 2007 - pubs.aip.org
The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous
indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for
which the channel length and width are patterned by photolithography and dry etching. To
prevent plasma damage to the active channel, a 100-nm-thick Si O x layer deposited by
plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The
a-IGZO TFT (W∕ L= 10 μ m∕ 50 μ m) fabricated on glass exhibited a high field-effect …
indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for
which the channel length and width are patterned by photolithography and dry etching. To
prevent plasma damage to the active channel, a 100-nm-thick Si O x layer deposited by
plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The
a-IGZO TFT (W∕ L= 10 μ m∕ 50 μ m) fabricated on glass exhibited a high field-effect …
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