High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
In this letter, we report on the improvement of gate controlled Al 2 O 3/(100) boron doped (B-
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors
using 40 nm thick Al 2 O 3 deposited by Atomic Layer Deposition at 380 C and then
annealed at 500 C in vacuum conditions. The high quality of Al 2 O 3 and an Al 2 O
3/diamond interface is verified thanks to electrical measurements and Transmission Electron
Microscopy (TEM) measurements. A density of interface states lower than 10 12 eV− 1 cm …
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors
using 40 nm thick Al 2 O 3 deposited by Atomic Layer Deposition at 380 C and then
annealed at 500 C in vacuum conditions. The high quality of Al 2 O 3 and an Al 2 O
3/diamond interface is verified thanks to electrical measurements and Transmission Electron
Microscopy (TEM) measurements. A density of interface states lower than 10 12 eV− 1 cm …
以上显示的是最相近的搜索结果。 查看全部搜索结果