A sensor for contactlessly detecting currents, has a sensor element having a magnetic
tunnel junction (MTJ), and detection circuitry, the sensor element having a resistance which
varies with the magnetic field, and the detection circuitry is arranged to detect a tunnel
current flowing through the tunnel junction. The sensor element may share an MTJ stack
with memory elements. Also it can provide easy integration with next generation CMOS
processes, including MRAM technology, be more compact, and use less power. Solutions …