We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz
measured at λ= 1040 nm⁠. The full bandwidth of the photodetector is achieved at a low
reverse bias of 1 V, compatible with the low driving voltage requirements of Si ultralarge-
scale integrated circuits. Due to the direct bandgap shrinkage induced by a 0.20% tensile
strain in the Ge layer, the device covers the entire C band and a large part of the L band in …