Hybrid silicon plasmonic ring resonator modulator
We propose a hybrid plasmonic modulator based on the ring resonator configuration. The
device structure is composed of a stack of layers of silicon-insulator-metal-insulator-silicon,
all on a buried oxide. The insulator embedded in the structure is an organic polymer with
strong electro-optical effects. The proposed device is characterized by its small footprint,
high extinction ratio, and moderate insertion losses. 3D Finite Difference Time Domain
simulations tools were employed for designing and simulating the operation of the …
device structure is composed of a stack of layers of silicon-insulator-metal-insulator-silicon,
all on a buried oxide. The insulator embedded in the structure is an organic polymer with
strong electro-optical effects. The proposed device is characterized by its small footprint,
high extinction ratio, and moderate insertion losses. 3D Finite Difference Time Domain
simulations tools were employed for designing and simulating the operation of the …
We propose a hybrid plasmonic modulator based on the ring resonator configuration. The device structure is composed of a stack of layers of silicon-insulator-metal-insulator-silicon, all on a buried oxide. The insulator embedded in the structure is an organic polymer with strong electro-optical effects. The proposed device is characterized by its small footprint, high extinction ratio, and moderate insertion losses. 3D Finite Difference Time Domain simulations tools were employed for designing and simulating the operation of the modulator at the telecommunication wavelength, while observing the device performance.
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